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| NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery-powered portable electronics. Features V(BR)DSS -12 V 44 mW @ -2.5 V http://onsemi.com MOSFET RDS(on) TYP 32 mW @ -4.5 V -6.2 A ID MAX * * * * * * High Performance Power MOSFET Dual-Low Vce(sat) Transistors as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin-out Provides Circuit Flexibility Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Pb-Free Device Low Vce(sat) PNP (Wall) VCEO MAX -30 V VEBO MAX -8.0 V IC MAX -2.0 A Low Vce(sat) PNP (USB) VCEO MAX -30 V VEBO MAX -8.0 V IC MAX -2.0 A Applications * Main Switch and Battery Charging Mux for Portable Electronics * Optimized for Commercial PMUs from Top Suppliers (See Figure 2) 8 1 1 C 2 7 8 DFN8 CASE 506BC MARKING DIAGRAM 1 3116 AYWW G G 3 D 6 3116 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 4 mCOOLTM 3x3 Pin Connections (Top View) 5 ORDERING INFORMATION Device NUS3116MTR2G Package WDFN8 (Pb-Free) Shipping 3000/Tape & Reel Figure 1. Simple Schematic For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 0 Publication Order Number: NUS3116MT/D NUS3116MT P-Channel Power MOSFET Maximum Ratings (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State TA = 25C TA = 85C t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2, Minimum Pad) Steady State TA = 25C TA = 25C TA = 85C Power Dissipation (Note 2) Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode)2 Lead Temperature for Soldering Purposes (1/8 from case for 10 s) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t < 10 s (Note 2) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Symbol RqJA RqJA RqJA RqJA Max 110 56 72 40 Units C/W C/W C/W C/W TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL TA = 25C PD Symbol VDSS VGS ID Value -12 8.0 -5.47 -4.0 -6.2 1.7 2.2 ID -4.4 -3.2 1.14 -25 -55 to 150 -2.8 260 W A C A C A W Units V V A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size of 0.5 in sq, 1 oz. Cu. P-Channel MOSFET Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = -250 mA ID = -250 mA, ref to 25C VGS = 0 V, VDS = -12 V TJ = 25C TJ = 125C -12.0 -10.1 -1.0 -10 200 nA V mV/C mA Symbol Test Condition Min Typ Max Units Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 8 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = -250 mA -0.45 -0.67 2.68 -1.1 V mV/C VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -3.0 A 32 44 5.9 40 50 mW Forward Transconductance gFS VDS = -16 V, ID = -3.0 A S 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% http://onsemi.com 2 NUS3116MT P-Channel MOSFET Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD VGS = 0 V, IS = -1.0 A TJ = 25C TJ = 125C -0.66 -0.54 70.8 14.3 56.4 44 nC ns -1.2 V td(on) tr td(off) tf VGS = -4.5 V, VDD = -12 V, ID = -3.0 A, RG = 3.0 8 17.5 80 56.5 ns CISS COSS CRSS QG(tot) QG(th) QGS QGD VGS = -4.5 V, VDS = -12 V, ID = -3.0 A VGS = 0 V, f = 1.0 MHz, VDS = -12 V 1329 200 116 13 1.5 2.2 2.9 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge trr ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.0 A 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% Dual-PNP Transistors Maximum Ratings (TJ = 25C unless otherwise stated) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continous Collector Current, Pulsed (Note 4) Operating Junction and Storage Temperature Thermal Resistance Dissipation Thermal Resistance (Note 5) Thermal Resistance Dissipation Thermal Resistance (Note 6) Symbol VCEO VCBO VEBO IC IC TJ, TSTG PD RqJA PD RqJA Value -30 -30 -8.0 -2.0 -6.0 -55 to 150 1.5 83 810 155 Units V V V A A C W C/W mW C/W 4. Single Pulse: Pulse Width = 1 ms 5. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 6. Surface-mounted on FR4 board using the minimum recommended pad size of 100 mm2, 1 oz. Cu. http://onsemi.com 3 NUS3116MT Dual-PNP Transistors Electrical Characteristics (TJ = 25C unless otherwise stated) Parameter OFF CHARACTERISTICS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 7) DC Current Gain (Note 7) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance hFE hFE VCE(sat) VCE(sat) VCE(sat) Cibo Cobo IC = -1.0 A, VCE = -2.0 V IC = -2.0 A, VCE = -2.0 V IC = -1.0 A, IB = -0.01 A IC = -1.0 A, IB = -0.1 A IC = -2.0 A, IB = -0.2 A VEB = -0.5 V, f = 1.0 MHz VCB = -3.0 V, f = 1.0 MHz 240 50 100 100 200 200 0.22 0.12 0.24 400 100 V V V pF pF VCEO VCBO VEBO ICES IC = -10 mA, IB = 0 IC = -0.1 mA, IE = 0 IE = -0.1 mA, IC = 0 VCES = -30 V -30 -30 -8.0 -0.1 V V V mA Symbol Test Condition Min Typ Max Units 7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% from WALL 1 C 8 CHR_ctl from USB 2 7 USB_ctl 3 R_sns 4 D 6 BAT_FET_N 5 Main Battery Supply Voltage VDD Figure 2. Typical Application Circuit http://onsemi.com 4 NUS3116MT TYPICAL CHARACTERISTICS - MOSFET 6 -I D, DRAIN CURRENT (A) 5 4 VGS = -1.4 V 3 2 1 0 0 1 2 3 4 TJ = 25C 5 6 -1.7 - -8.0 V -1.6 V -I D, DRAIN CURRENT (A) -1.5 V 6 5 TJ = 25C 4 3 2 1 0 0.5 1.0 1.5 2.0 -V GS, GATE-T O-SOURCE VOLTAGE (V) TJ = 100C TJ = -55C VDS -10 V -V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 3. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.05 VGS = 4.5 V TJ = 100C 0.04 0.05 Figure 4. Transfer Characteristics TJ = 25C VGS = -2.5 V 0.04 TJ = 25C 0.03 TJ = -55C 0.02 1 2 3 4 5 6 -I D, DRAIN CURRENT (A) VGS = -4.5 V 0.03 0.02 1 2 3 4 5 6 -I D, DRAIN CURRENT (A) Figure 5. On-Resistance vs. Drain Current 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -3 A VGS = -4.5 V -I DSS, LEAKAGE (nA) 1.4 10,000 Figure 6. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.2 1,000 1.0 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 2 4 6 TJ = 100C 8 10 12 TJ, JUNCTION TEMPERATURE (C) -V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. On-Resistance Variation with Temperature Figure 8. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 5 NUS3116MT TYPICAL CHARACTERISTICS - MOSFET -V GS, GATE-T O-SOURCE VOLTAGE (V) 2800 VDS = 0 V VGS = 0 V 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Qgs Qgd ID = -3 A TJ = 25C VGS VDS QT 12 10 8 6 4 2 0 14 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) TJ = 25C 2400 Ciss C, CAPACITANCE (pF) 2000 1600 1200 800 400 0 -4 -2 0 2 4 6 8 10 12 Crss Coss Ciss -V GS -V DS GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Capacitance Variation 1,000 -I S, SOURCE CURRENT (A) VDD = -12 V ID = -3.0 A VGS = -4.5 V t, TIME (ns) 100 tf tr 10 td(on) Figure 10. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 10 VGS = 0 V TJ = 25C td(off) 1 TJ = 150C TJ = -55C 0.1 1 1 10 RG, GATE RESISTANCE (W) 100 0.01 0 0.2 0.4 0.6 0.8 1.0 -V SD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance 100 -I D, DRAIN CURRENT (A) Single Pulse TC = 25C 10 Figure 12. Diode Forward Voltage vs. Current 100 ms 1 ms 1 10 ms Mounted on 2 sq. FR4 board (0.5 sq. 2 oz. Cu single sided) with MOSFET die operating. 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 dc 0.01 100 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 6 NUS3116MT TYPICAL CHARACTERISTICS - MOSFET 1 D = 0.5 RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 t, TIME (s) 1E-01 1E+00 1E+01 1E+02 1E+03 Figure 14. FET Thermal Response http://onsemi.com 7 NUS3116MT TYPICAL CHARACTERISTICS - BJT 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC/IB = 10 TJ = 25C IC/IB = 100 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC/IB = 100 -55 C 150C 25C VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 10 Figure 15. Collector Emitter Saturation Voltage vs. Collector Current 725 675 625 575 525 475 425 375 325 275 225 175 125 75 1.0 150C (2.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) Figure 16. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 150C -55 C 25C hFE, DC CURRENT GAIN 25C (2.0 V) -55 C (2.0 V) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. DC Current Gain vs. Collector Current 1.0 0.9 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 0.8 0.7 0.6 0.5 150C 0.4 0.3 0.2 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) VCE = -1.0 V -55 C 25C VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 Figure 18. Base Emitter Saturation Voltage vs. Collector Current 10 mA 0.8 100 mA 300 mA 500 mA 0.6 0.4 0.2 0 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 19. Base Emitter Turn-On Voltage vs. Collector Current Figure 20. Saturation Region http://onsemi.com 8 NUS3116MT TYPICAL CHARACTERISTICS - BJT 300 275 250 225 200 175 150 125 100 0 1 2 3 4 5 6 7 VEB, EMITTER BASE VOLTAGE (V) Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 90 80 70 60 50 40 30 20 0 5 10 15 20 25 30 35 40 45 VCB, COLLECTOR BASE VOLTAGE (V) Figure 21. Input Capacitance Figure 22. Output Capacitance http://onsemi.com 9 NUS3116MT PACKAGE DIMENSIONS DFN8, 3x3, 0.65P CASE 506BC-01 ISSUE O D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 D3 E E2 e G2 G3 K L SEATING PLANE MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 1.00 1.20 0.95 1.15 3.00 BSC 1.70 1.90 0.65 BSC 0.15 REF 0.20 REF 0.20 --0.25 0.45 PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C 0.05 C 8X 0.05 C G3 D2 8X L D3 e 1 4 2.55 1.28 1.10 2X E2 1.80 8X K 8 5 DIMENSIONS: MILLIMETERS 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 CC CC CC CC CC CC CC CC CC CC CC CC CC CC CC CC EEE EEE EEE EEE G2 E TOP VIEW A (A3) STYLE 1: PIN 1. EMITTER1 2. EMITTER2 3. COLLECTOR 4. SOURCE 5. DRAIN 6. GATE 7. BASE2 8. BASE1 SIDE VIEW A1 C SOLDERING FOOTPRINT* 3.30 1 8X 0.35 1.15 0.65 PITCH 8X 0.52 NUS3116MT/D |
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